STGW35NC60WD STMicroelectronics, STGW35NC60WD Datasheet - Page 8
STGW35NC60WD
Manufacturer Part Number
STGW35NC60WD
Description
IGBT N-CH 40A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Specifications of STGW35NC60WD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
260W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
497-7488-5
STGW35NC60WD
STGW35NC60WD
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
8/14
Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
temperature
Figure 9.
Figure 11. Switching losses vs temperature
V
CE(sat)
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
(V)
3
2
1
0
Collector-emitter on voltage vs
collector current
current
5 10 15 20 25 30 35 40 45 50 55 60
T
J
=-50°C
T
J
=25°C
STGW35NC60WD
T
J
=150°C
HV28950
I
C
(A)