STGW45NC60WD STMicroelectronics, STGW45NC60WD Datasheet

no-image

STGW45NC60WD

Manufacturer Part Number
STGW45NC60WD
Description
IGBT ULTRA FAST 600V 90A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW45NC60WD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 30A
Current - Collector (ic) (max)
90A
Power - Max
285W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-10092-5
STGW45NC60WD

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGW45NC60WD
Manufacturer:
ST
0
Features
Applications
Description
This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
June 2008
Low C
susceptibility)
Very soft ultra fast recovery anti parallel diode
High frequency inverters, UPS
Motor drivers
HF, SMPS and PFC in both hard switch and
resonant topologies
Welding
Induction heating
STGW45NC60WD
Order code
RES
Device summary
/ C
IES
ratio (no cross conduction
GW45NC60WD
Marking
Rev 1
Figure 1.
TO-247 long leads
Package
45 A - 600 V ultra fast IGBT
Internal schematic diagram
STGW45NC60WD
TO-247 long leads
1
2
Packaging
3
Tube
www.st.com
1/14
14

Related parts for STGW45NC60WD

STGW45NC60WD Summary of contents

Page 1

... Table 1. Device summary Order code STGW45NC60WD June 2008 600 V ultra fast IGBT Figure 1. Marking Package GW45NC60WD TO-247 long leads Rev 1 STGW45NC60WD TO-247 long leads Internal schematic diagram Packaging Tube www.st.com 1/14 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STGW45NC60WD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...

Page 3

... STGW45NC60WD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Collector-emitter voltage (V V CES (1) Collector current (continuous (1) Collector current (continuous (2) I Turn-off latching current CL (3) I Pulsed collector current CP V Gate-emitter voltage GE Diode RMS forward current Surge non repetitive forward current t I FSM sinusoidal ...

Page 4

... Gate-collector charge Q gc 4/14 Parameter Test conditions 600 600 V, Tc=125 ° ± Parameter Test conditions MHz 390 (see Figure 18) STGW45NC60WD Min. Typ. Max. Unit 600 = Tc= 125 °C 1 250 µA 3. Min. Typ. Max. Unit 2900 = 0 298 126 2 5.75 V 500 µ ±100 ...

Page 5

... STGW45NC60WD Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Off voltage rise time r off Turn-off delay time d off Current fall time ...

Page 6

... Reverse recovery current I rrm t Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I rrm 6/14 Parameter Test conditions di/dt =100 A/µs (see Figure 20 125 °C, C di/dt =100 A/µs (see Figure 20) STGW45NC60WD Min Typ. Max 2.4 = 125 ° 100 290 5.8 Unit ...

Page 7

... STGW45NC60WD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 4. Transconductance Figure 6. Collector-emitter on voltage vs collector current Electrical characteristics Figure 3. Transfer characteristics Figure 5. Collector-emitter on voltage vs temperature Figure 7. Normalized gate threshold vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 10. Capacitance variations Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector 8/14 Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature current STGW45NC60WD ...

Page 9

... STGW45NC60WD Figure 14. Thermal impedance Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 Tj=125°C Tj=125°C (Maximum values) (Maximum values) 100 90 80 Tj=125°C Tj=125°C 70 (Typical values) (Typical values VFM( Figure 15. Turn-off SOA Tj=25°C (Maximum values Electrical characteristics 9/14 ...

Page 10

... Test circuit 3 Test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveforms 10/14 Figure 18. Gate charge test circuit Figure 20. Diode recovery times waveform STGW45NC60WD ...

Page 11

... STGW45NC60WD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 12

... TO-247 long leads mechanical data mm Min. Typ. 4.85 2.2 0.4 1 1.9 3 10.9 15.45 19.85 3.7 18.3 14.2 34.05 5.35 2 60° 3.55 STGW45NC60WD Max. 5.16 2.6 0.8 1 2.4 3.4 16.03 21.09 4.3 19.13 20.3 41.38 6.3 3 5° 3.65 7395426_Rev_D ...

Page 13

... STGW45NC60WD 5 Revision history Table 9. Document revision history Date 05-Jun-2008 Revision 1 First release Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STGW45NC60WD ...

Related keywords