STGW45NC60WD STMicroelectronics, STGW45NC60WD Datasheet - Page 4

• Manufacturer Part Number: STGW45NC60WD
• Description: IGBT ULTRA FAST 600V 90A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW45NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 90A
• Power - Max: 285W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-10092-5; STGW45NC60WD

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1.
Table 5.
V
Symbol
Symbol
V
CASE
V
(BR)CES
g
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
Pulsed: pulse duration = 300 ìs, duty cycle 1.5%
CES
GES
Q
fs
oes
ies
res
ge
gc
g
(1)
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter leakage
current (V
Gate-emitter leakage
current (V
Forward transconductance
Static (electrical characteristics)
Dynamic (electrical characteristics)
Parameter
Parameter
GE
CE
GE
= 0)
= 0)
= 0)
V
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
C
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1 mA
= 15 V, I
= 15 V, I
= V
= 25 V, f = 1 MHz, V
= 390 V, I
= 15 V,
= 600 V
= 600 V, Tc=125 °C
= ± 20 V
= 15 V
GE
Test conditions
Test conditions
, I
,
C
I
C
C
C
= 250 µA
= 30 A
= 30 A, Tc= 125 °C
C
= 30 A
= 30 A,
GE
= 0
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
STGW45NC60WD
2900
298
126
2.1
1.9
20
59
16
46
±100
5.75
500
2.6
5
mA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
V
S