IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet
IRG4PH40UDPBF
Specifications of IRG4PH40UDPBF
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IRG4PH40UDPBF Summary of contents
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... Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH40UDPbF G TM ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– ...
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... IRG4PH40UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Load Current vs. Frequency 100 T = 150 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4PH40UDPbF 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 T = 150 15V Fig Typical Transfer Characteristics For both: D uty cy cle: 50 125° 90°C s ink ...
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... IRG4PH40UDPbF 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Capacitance vs. Collector-to-Emitter Voltage 5 800V 15V GE ° 21A C 4.5 4.0 3.5 3 Gate Resistance (Ohm) , Gate Resistance ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PH40UDPbF SHORTED 100 0 Fig Typical Gate Charge vs. 100 R = Ohm 15V 800V -60 -40 - Fig Typical Switching Losses vs. ...
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... IRG4PH40UDPbF 16 Ω Ohm 150 C ° 800V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 0° 5° 5° rwa rd V oltage D rop - 20V = 125 SAFE OPERATING AREA 10 100 1000 V , Collector-to-Emitter Voltage (V) CE Fig ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° . . /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PH40UDPbF . Fig Typical Recovery Current vs /dt Fig Typical ° ° 8. / /µ ° ° / /µs) f /dt vs. di /dt (rec / ...
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... IRG4PH40UDPbF Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - ...
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... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com IRG4PH40UDPbF Figure 18a's D.U. 800V Figure 20. Pulsed Collector Current Test Circuit 800V @25°C C Test Circuit 9 ...
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... IRG4PH40UDPbF Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...