IRG4PH50SPBF International Rectifier, IRG4PH50SPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PH50SPBF
• Description: IGBT STD 1200V 57A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH50SPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 33A
• Current - Collector (ic) (max): 57A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 57A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH50SPBF

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1000
100
10
60
40
20
1
0
0.0
0.1
Fig. 2 - Typical Output Characteristics
Square wave:
V
1.0
CE
60% of rated
Ideal diodes
, Collector-to-Emitter Voltage (V)
voltage
T = 25 C
J
2.0
°
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
T = 150 C
3.0
J
GE
= 15V
°
4.0
(Load Current = I
f, Frequency (kHz)
5.0
1
RMS
1000
100
of fundamental)
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 40W
10
Fig. 3 - Typical Transfer Characteristics
J
sink
1
5
T = 150 C
= 90°C
J
6
V
GE
°
, Gate-to-Emitter Voltage (V)
IRG4PH50SPbF
T = 25 C
7
J
8
°
Triangular wave:
9
V
5µs PULSE WIDTH
Clamp voltage:
80% of rated
CC
= 50V
10
11
10
A
3
12