IRG4PH50SPBF International Rectifier, IRG4PH50SPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH50SPBF
• Description: IGBT STD 1200V 57A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH50SPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 33A
• Current - Collector (ic) (max): 57A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 57A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH50SPBF

www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
25.0
24.0
23.0
22.0
21.0
7000
6000
5000
4000
3000
2000
1000
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
C ies
C oes
C res
Collector-to-Emitter Voltage
= 960V
= 15V
= 25 C
= 33A
R
V
G
10
G
CE
°
, Gate Resistance (Ohm)
V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
( Ω )
C
ce
SHORTED
40
50
100
1000
100
10
20
15
10
1
Fig. 10 - Typical Switching Losses vs.
5
0
-60 -40 -20
0
R
V
V
V
Fig. 8 - Typical Gate Charge vs.
GE
CC
I
G
CC
C
= 15V
= 960V
= 5Ohm
= 400V
= 33A
25
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
J
Ω
Q , Total Gate Charge (nC)
Ω
G
IRG4PH50SPbF
0
50
20 40
75
60
100
80 100 120 140 160
125
I =
I =
I =
C
C
C
°
16.5
150
66
33
A
A
A
5
175