IRG4PF50WDPBF International Rectifier, IRG4PF50WDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PF50WDPBF
• Description: IGBT W/DIODE 900V 51A TO247AC
• Manufacturer: International Rectifier
• Type: Warpr

Specifications of IRG4PF50WDPBF

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 28A
• Current - Collector (ic) (max): 51A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3300 pF
• Current, Collector: 51 A
• Energy Rating: 3.97 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 20 to 100 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 900 V
• Voltage, Collector To Emitter, Saturation: 2.74 V
• Dc Collector Current: 51A
• Collector Emitter Voltage Vces: 900V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 900V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PF50WDPBF

IRG4PF50WD
Switching Characteristics @ T
Electrical Characteristics @ T
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
V
V
V
g
I
V
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
V
fe
E
2
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
g
gc
ies
oes
res
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
900
3.0
—
26
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.295
3300
2.74
2.12
2.63
1.34
3.97
2.25
160
110
190
200
260
150
270
164
680 1838
120
-13
2.5
2.1
6.0
5.8
8.3
19
53
71
50
69
52
13
90
76
39
45
—
—
—
—
—
—
±100
240
220
170
135
245
675
500
2.7
6.0
2.0
6.5
3.5
3.0
5.3
—
29
80
10
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
mA
µA
nA
nC
mJ
mJ
nH
nC
pF
ns
ns
ns
V
V
S
V
A
I
V
V
I
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
I
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
T
T
T
V
V
I
I
I
V
V
V
V
V
I
I
V
T
V
T
V
V
ƒ = 1.0MHz
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 28A
= 28A, V
= 28A, V
= 28A
= 60A
= 28A, T
= 16A
= 16A, T
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
= V
= 50V, I
= 15V
= 15V, R
= 15V, R
= 0V
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 30V
GE
GE
, I
, I
J
J
CC
CC
C
C
CE
CE
CE
C
C
C
See Fig.
See Fig.
Conditions
= 150°C
= 150°C
Conditions
See Fig.
See Fig.
= 250µA
= 3.5mA
G
G
= 250µA
= 250µA
= 28A
= 720V
= 720V
See Fig. 11, 18
= 900V
= 10V, T
= 900V, T
= 5.0
= 5.0
14
15
17
16
See Fig. 8
See Fig. 7
di/dt = 200A/µs
J
V
See Fig. 2, 5
See Fig. 13
V
www.irf.com
J
= 25°C
I
GE
R
F
= 150°C
= 200V
= 16A
= 15V