IRG4PF50WDPBF International Rectifier, IRG4PF50WDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PF50WDPBF
• Description: IGBT W/DIODE 900V 51A TO247AC
• Manufacturer: International Rectifier
• Type: Warpr

Specifications of IRG4PF50WDPBF

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 28A
• Current - Collector (ic) (max): 51A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3300 pF
• Current, Collector: 51 A
• Energy Rating: 3.97 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 20 to 100 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 900 V
• Voltage, Collector To Emitter, Saturation: 2.74 V
• Dc Collector Current: 51A
• Collector Emitter Voltage Vces: 900V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 900V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PF50WDPBF

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1000
100
10
40
30
20
10
1
0
0.1
Fig. 2 - Typical Output Characteristics
1
S q u a re w a v e :
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
Id e a l d io d es
T = 25 C
I
J
voltage
°
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
T = 150 C
J
= 15V
(Load Current = I
1
°
10
f, Frequency (KHz)
RMS
of fundamental)
Fig. 3 - Typical Transfer Characteristics
1000
100
10
1
5
T = 150 C
J
V
GE
10
6
°
, Gate-to-Emitter Voltage (V)
IRG4PF50WD
T = 25 C
J
F or b oth:
D uty c y c le : 50%
T = 12 5° C
T
G a te d riv e a s s pe c ified
P ow er D is s ipation =
J
sink
7
°
= 90 °C
V
5µs PULSE WIDTH
8
CC
= 50V
40
W
9
100
10
3