STGY40NC60VD STMicroelectronics, STGY40NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGY40NC60VD
• Description: IGBT N-CHAN 50A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY40NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 260W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6736-5; STGY40NC60VD

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
V
Symbol
Symbol
V
V
CASE
BR(CES)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
= 0)
V
V
V
V
Figure 17
I
V
V
V
V
V
V
C
GE
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1mA, V
= V
= Max rating,T
= Max rating,T
= 15V, I
= 15V, I
= ±20V, V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
= 15V
Test conditions
Test conditions
GE
, I
,
GE
I
C
C
C
C
= 40A
=40A,Tc=125°C
C
= 250µA
=20A
CE
= 0
= 40A,
= 0
C
C
= 25°C
= 125°C
Min.
Min.
3.75
600
4550
Typ.
Typ.
350
105
214
1.9
1.7
30
96
20
STGY40NC60VD
Max.
Max.
±100
5.75
2.5
10
1
Unit
Unit
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S