STGY40NC60VD STMicroelectronics, STGY40NC60VD Datasheet - Page 6

• Manufacturer Part Number: STGY40NC60VD
• Description: IGBT N-CHAN 50A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY40NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 260W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6736-5; STGY40NC60VD

Electrical characteristics
6/14
Table 7.
Symbol
I
I
Q
Q
rrm
rrm
V
t
t
rr
rr
rr
rr
f
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
Tj = 25°C, di/dt = 100 A/µs
Figure 19
I
Tj =125°C, di/dt = 100A/µs
Figure 19
f
f
f
f
= 20A
= 20A, Tj = 125°C
= 20A,V
= 40A,V
Test conditions
R
R
= 40V,
= 50V,
Min.
Typ.
237
1.5
5.4
44
66
88
STGY40NC60VD
1
3
Max.
2.2
Unit
nC
nC
ns
ns
V
V
A
A