IRG4PSH71UDPBF International Rectifier, IRG4PSH71UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PSH71UDPBF
• Description: IGBT W/DIODE 1200V 99A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71UDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 70A
• Current - Collector (ic) (max): 99A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 99A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -5°C To +150°C
• Rohs Compliant: Yes
• Package: TO-274AA
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 99
• Ic @ 100c (a): 50
• Vce(on)@25c Typ (v): 2.52
• Vce(on)@25c Max (v): 2.70
• Ets Typ (mj): 18.2
• Ets Max (mj): 19.7
• Vf Typ: 2.92
• Pd @25c (w): 350
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71UDPBF

IRG4PSH71UDPbF
∆V
∆V
Electrical Characteristics @ T
V
V
V
V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
(BR)CES
(BR)ECS
CE(on)
GE(th)
FM
on
off
tot
TS
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Forward Transconductance
b
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Ã
Min. Typ. Max. Units
Min. Typ. Max. Units
1200
3.0
19
—
—
—
—
—
48
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6640
0.78
2.52 2.70
3.17
2.68
2.92
2.88
18.2 19.7
-9.2
380
130
250
220
330
480
420
110
180
350
870 1300
150
130
8.8
9.4
6.0
8.9
—
—
—
72
—
—
—
—
61
46
77
43
78
26
13
60
5000
±100
500
570
200
350
330
170
270
530
230
200
6.0
2.0
3.9
3.7
9.0
24
13
—
—
—
—
—
— mV/°C V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C V
A/µs
nC V
mJ
mJ
nH Measured 5mm from package
nC
µA V
nA V
pF V
ns
ns
ns
V
V
V
S
V
A
V
V
V
V
V
V
I
I
I
V
I
V
Energy losses include "tail"
See Fig. 9, 10, 11, 14
T
I
V
Energy losses include "tail"
V
f = 1.0MHz
T
T
T
T
T
T
T
T
I
I
I
F
F
C
C
C
J
J
J
J
J
J
J
J
C
C
C
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
CC
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
= 70A
= 70A, T
= 70A
= 70A, V
= 70A, V
= 150°C, See Fig. 9, 10, 11, 14
= 70A
= 140A
= 70A, T
= V
= V
= 100V, I
= 400V
= 30V,
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 15V, R
= 15V, R
= 0V
Conditions
= 15V
Conditions
GE
GE
, I
, I
C
C
C
CC
CC
See Fig.13
J
C
C
CE
CE
CE
J
= 250µA
= 1.0A
= 1mA
= 150°C
G
G
C
= 150°C
= 250µA
= 1.0mA
= 960V
= 960V
See Fig
See Fig
See Fig
See Fig
= 1200V
= 10V
= 1200V, T
= 5.0Ω
= 5.0Ω
= 70A
See Fig.7
14
15
16
17
See Fig.8
www.irf.com
V
See Fig.2, 5
di/dt = 200A/µs
J
GE
V
= 150°C
I
R
F
= 15V
= 70A
= 200V