IRG4PSH71UDPBF International Rectifier, IRG4PSH71UDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PSH71UDPBF
• Description: IGBT W/DIODE 1200V 99A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71UDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 70A
• Current - Collector (ic) (max): 99A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 99A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -5°C To +150°C
• Rohs Compliant: Yes
• Package: TO-274AA
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 99
• Ic @ 100c (a): 50
• Vce(on)@25c Typ (v): 2.52
• Vce(on)@25c Max (v): 2.70
• Ets Typ (mj): 18.2
• Ets Max (mj): 19.7
• Vf Typ: 2.92
• Pd @25c (w): 350
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71UDPBF

www.irf.com
14000
12000
10000
8000
6000
4000
2000
22
20
18
16
Fig. 9 - Typical Switching Losses vs.
0
0
1
V CC = 960V
V GE = 15V
T J = 25°C
I C = 70A
Fig. 7 - Typical Capacitance vs.
Cies
Coes
Cres
Collector-to-Emitter Voltage
V CE , Collector-to-Emitter Voltage (V)
Gate Resistance
10
R G , Gate Resistance (Ω)
V GE = 0V,
C ies
C res
C oes = C ce + C gc
10
= C ge + C gc , C ce
= C gc
20
f = 1 MHZ
100
30
SHORTED
40
1000
1000
100
10
Fig. 10 - Typical Switching Losses vs.
20
16
12
1
8
4
0
-60 -40 -20
0
R G = 5.0 Ω
V GE = 15V
V CC = 960V
V CC = 400V
I C = 70A
Fig. 8 - Typical Gate Charge vs.
IRG4PSH71UDPbF
Junction Temperature
T J , Junction Temperature (°C)
I C = 70A
Gate-to-Emitter Voltage
I C = 140A
I C = 35A
Q G, Total Gate Charge (nC)
100
0
20
40
200
60
80 100 120 140 160
300
5
400