IXBH42N170 IXYS, IXBH42N170 Datasheet - Page 3

• Manufacturer Part Number: IXBH42N170
• Description: IGBT HIVOLT 1700V 75A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH42N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 42A
• Current - Collector (ic) (max): 80A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1700 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 75 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): 42
• Vce(sat), Typ, Tj=25°c, (v): 2.8
• Tf Typ, Tj=25°c, (ns): 740
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1157068

© 2008 IXYS CORPORATION, All rights reserved
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
6
0.5
0.5
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
21A
1.0
1.0
8
42A
1.5
1.5
9
V
V
V
@ 125ºC
@ 25ºC
CE
CE
GE
I
C
2.0
2.0
- Volts
10
- Volts
- Volts
V
= 84A
GE
= 15V
11
13V
11V
2.5
2.5
V
GE
12
= 15V
3.0
3.0
13V
11V
T
J
13
5V
9V
7V
= 25ºC
3.5
3.5
9V
7V
5V
14
4.0
4.0
15
160
140
120
100
300
270
240
210
180
150
120
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
90
60
30
0
0
4.0
-50
0
V
4.5
Fig. 2. Extended Output Characteristics
V
GE
2
GE
-25
= 15V
= 15V
5.0
Fig. 4. Dependence of V
13V
4
Fig. 6. Input Admittance
0
5.5
Junction Temperature
6
T
11V
9V
7V
J
6.0
- Degrees Centigrade
25
8
V
V
@ 25ºC
6.5
CE
GE
I
C
10
50
- Volts
= 84A
- Volts
7.0
I
C
= 42A
12
T
75
J
7.5
I
= - 40ºC
C
IXBH42N170
IXBT42N170
CE(sat)
= 21A
125ºC
14
25ºC
8.0
IXYS REF: B_42N170(7N)10-07-08
100
16
on
8.5
125
18
9.0
150
9.5
20