IXBH42N170 IXYS, IXBH42N170 Datasheet - Page 5

• Manufacturer Part Number: IXBH42N170
• Description: IGBT HIVOLT 1700V 75A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH42N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 42A
• Current - Collector (ic) (max): 80A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1700 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 75 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): 42
• Vce(sat), Typ, Tj=25°c, (v): 2.8
• Tf Typ, Tj=25°c, (ns): 740
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1157068

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25
10
20
Switching Times vs. Gate Resistance
25
R
V
V
Switching Times vs. Drain Current
GE
CE
G
t
T
V
35
15
r
J
CE
= 10Ω
Rise Time vs. Junction Temperature
= 125ºC, V
= 15V
= 850V
30
= 850V
Fig. 17. Resistive Turn-off
I
Fig. 15. Resistive Turn-on
45
C
20
35
= 84A
Fig. 13. Resistive Turn-on
T
40
t
d(on)
J
55
GE
25
T
= 25ºC, 125ºC
J
= 15V
45
- Degrees Centigrade
- - - -
I
C
R
65
30
- Amperes
50
G
- Ohms
I
I
55
C
75
t
R
V
C
35
I
= 42A
f
G
CE
= 84A
C
= 10Ω, V
60
= 42A
= 850V
85
40
65
t
GE
d(off)
70
95
45
= 15V
75
- - - -
105
50
80
115
85
55
440
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900
800
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40
0
20
25
10
Switching Times vs. Junction Temperature
t
R
V
Switching Times vs. Gate Resistance
25
f
G
CE
R
V
V
35
15
GE
CE
G
= 10Ω, V
t
T
V
= 850V
f
J
CE
= 10Ω
= 15V
= 850V
= 125ºC, V
30
= 850V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
20
Rise Time vs. Drain Current
35
Fig. 14. Resistive Turn-on
t
GE
d(off)
55
T
= 15V
25
J
t
40
d(off
GE
I
- Degrees Centigrade
- - - -
C
I
I
65
= 15V
= 42A
C
C
)
45
R
= 84A
- - - -
30
= 42A
G
I
C
- Ohms
75
50
- Amperes
T
35
T
J
J
= 125ºC
55
= 25ºC
85
40
60
95
45
65
IXBH42N170
I
IXBT42N170
105
C
= 84A
IXYS REF: B_42N170(7N)10-07-08
70
50
115
75
55
125
80
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200
0
380
360
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85