IXBX25N250 IXYS, IXBX25N250 Datasheet

IGBT 2500V 55A 300W PLUS247

IXBX25N250

Manufacturer Part Number
IXBX25N250
Description
IGBT 2500V 55A 300W PLUS247
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet

Specifications of IXBX25N250

Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 25A
Current - Collector (ic) (max)
55A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vces, (v)
2500
Ic25, Tc=25°c, (a)
55
Ic90, Tc=90°c, (a)
25
Vce(sat), Typ, Tj=25°c, (v)
3.3
Tf Typ, Tj=25°c, (ns)
640
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.42
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) From Case for 10s
Plastic Body for 10 seconds
Mounting Force
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 250μA, V
= 250μA, V
= I
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 90°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8
= 15V, T
C90
TM
, V
Monolithic
GE
V
GE
= 15V, Note 1
CES
VJ
GE
CE
= ± 20V
= 125°C, R
, V
= V
= 0V
GE
GE
= 0V
GE
= 1M
G
= 4.7
Ω
T
T
J
J
= 125°C
Ω
= 125°C
IXBX25N250
20..120 / 4.5..27
V
-55 ... +150
-55 ... +150
Characteristic Values
2500
2.5
Min.
CES
I
Maximum Ratings
CM
2000
2500
2500
= 80
± 20
± 30
300
150
300
260
180
55
25
Typ.
3.4
6
Max.
±100
5.0
3.3
50
3 mA
N/lb.
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
V
I
V
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C90
International Standard Package
Low Conduction Losses
Low Gate Drive Requirement
High Power Density
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generator
Capacitor Discharge Circuit
AC Switches
High Blocking Voltage
CES
CE(sat)
G
TM
C
≤ ≤ ≤ ≤ ≤ 3.3V
= 2500V
= 25A
E
E
Tab = Collector
Tab
DS100044A(10/10)
= Emitter

Related parts for IXBX25N250

IXBX25N250 Summary of contents

Page 1

... GE • 0 CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2010 IXYS CORPORATION, All Rights Reserved IXBX25N250 Maximum Ratings 2500 Ω 2500 ± 20 ± 180 Ω ≤ V 2000 CES 300 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 6 Characteristic Values Min ...

Page 2

... J 640 140 510 0.15 Characteristic Values Min. Typ. 1.6 37.2 ≤ 2%. > 1200V. DS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBX25N250 PLUS 247 (IXBX) Outline Terminals Gate Collector 3 - Emitter ns ns Dim. Millimeter Min 4.83 A 2.29 ns ...

Page 3

... T = 25ºC J 1.10 1.05 1.00 0.95 0.90 0.85 0. -50 IXBX25N250 Fig. 2. Extended Output Characteristics @ 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V CE(sat) Junction Temperature V = 15V 50A 25A 12.5A C ...

Page 4

... MHz 1,000 C oes 100 C res Volts CE IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 7.0 7.5 8.0 8.5 9.0 9 125ºC J 2.0 2.2 2.4 2.6 2.8 3.0 C ies IXBX25N250 Fig. 8. Transconductance Amperes C Fig. 10. Gate Charge 1kV 25A 10mA ...

Page 5

... V = 15V 180 600 GE = 1250V 160 500 400 140 300 120 T = 125ºC, 25ºC J 200 100 IXBX25N250 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 4.7Ω 15V 1250V 125º 25º Amperes C Fig. 16. Resistive Turn-off Switching Times vs. ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXBX25N250 0.1 1 IXYS REF: B_25N250(6P)9-30-08 10 ...

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