IXBX25N250 IXYS, IXBX25N250 Datasheet - Page 5

• Manufacturer Part Number: IXBX25N250
• Description: IGBT 2500V 55A 300W PLUS247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBX25N250

• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 25A
• Current - Collector (ic) (max): 55A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 2500
• Ic25, Tc=25°c, (a): 55
• Ic90, Tc=90°c, (a): 25
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 640
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.42
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2010 IXYS CORPORATION, All Rights Reserved
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10
25
4
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
t
T
V
r
J
CE
8
R
V
I
35
= 125ºC, V
C
G
CE
15
= 1250V
= 25A, 50A
= 4.7Ω, V
= 1250V
12
Fig. 13. Resistive Turn-on Rise Time vs.
45
20
16
GE
t
GE
d(on)
= 15V
= 15V
55
20
- - - -
Junction Temperature
Gate Resistance
25
T
Drain Current
J
- Degrees Centigrade
24
I
65
C
R
- Amperes
G
30
- Ohms
28
75
t
R
V
f
G
CE
32
= 4.7Ω, V
= 1250V
T
35
J
I
C
85
= 125ºC, 25ºC
36
= 25A
GE
t
40
d(off)
40
95
= 15V
- - - -
44
I
C
105
45
= 50A
48
115
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40
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25
4
R
V
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
CE
G
t
T
V
8
f
J
CE
= 4.7Ω, V
35
= 125ºC, V
= 1250V
= 1250V
15
t
R
V
f
G
CE
12
Fig. 14. Resistive Turn-on Rise Time vs.
= 4.7Ω, V
45
= 1250V
GE
16
= 15V
GE
t
20
d(off
55
= 15V
Junction Temperature
GE
t
)
20
d(off)
T
- - - -
J
= 15V
Gate Resistance
T
T
- Degrees Centigrade
J
J
65
25
- - - -
24
= 125ºC
= 25ºC
Drain Current
R
G
I
C
28
75
- Ohms
- Amperes
30
I
32
C
85
I
= 50A
C
I
= 25A
IXBX25N250
C
36
35
= 50A
95
40
I
C
105
= 25A
40
44
115
48
45
125
52
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200
0
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100
50