APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 8

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
1400
1200
1000
120
100
800
600
400
200
200
180
160
140
120
100
Figure 32. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
80
60
40
20
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
t
T
rr
V
V
J
F
T
R
F
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
J
, ANODE-TO-CATHODE VOLTAGE (V)
= 400V
J
200
, JUNCTION TEMPERATURE (°C)
= 175°C
0.5
25
V
R
80A
, REVERSE VOLTAGE (V)
T
J
400
50
I
= 125°C
1
RRM
20A
10
600
1.5
75
Q
rr
800
100
T
2
J
T
= -55°C
t
J
rr
= 25°C
Q
1000
125
2.5
rr
100 200
40A
1200
150
3
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
180
160
140
120
100
80
60
40
20
25
20
15
10
80
70
60
50
40
30
20
10
0
5
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
20A
600
600
100
80A
80A
40A
40A
800
800
125
20A
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 400V
1200
1200
175