APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 9

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
TO-264MAX™ (L2) Package Outline
Figure 34, Diode Reverse Recovery Waveform and Definitions
RRM
Dimensions in Millimeters and (Inches)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
and t rr .
e1 SAC: Tin, Silver, Copper
di
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
F
/dt Adjust
Figure 33. Diode Test Circuit
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
2-Plcs.
30µH
19.51 (.768)
20.50 (.807)
Zero
V r
APT40GT60BR
1
TRANSFORMER
PEARSON 2878
Collector
(Cathode)
2.29 (.090)
2.69 (.106)
Gate
Emitter
(Anode)
CURRENT
2
D.U.T.
3
4
5
APT65GP60L2DQ2
t rr / Q rr
Waveform
0.25 I RRM