IXSQ20N60B2D1 IXYS, IXSQ20N60B2D1 Datasheet - Page 2

• Manufacturer Part Number: IXSQ20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO-3P
• Manufacturer: IXYS

Specifications of IXSQ20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
t
R
Note 1:
RM
d(on)
d(off)
fi
d(on)
d(off)
fi
rr
rr
ri
ri
fs
off
on
off
F
ies
oes
res
g
ge
gc
thJC
thCS
thJC
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
I
V
I
F
F
F
R
= 25A, V
= 15A, V
= 1 A; -di/dt = 100 A/µs; V
= 100 V
Inductive load, T
I
V
Switching times may increase for V
(Clamp) > 0.8 • V
increased R
Inductive load, T
I
V
Switching times may increase for
V
or increased R
Test Conditions
I
V
f = 1 MHz
I
Test Conditions
C
C
C
C
CE
CE
CE
CE
= 16A, V
= 16 A, V
= 16A; V
= 16A, V
= 0.8 V
= 0.8 V
(Clamp) > 0.8 • V
= 25 V, V
GE
GE
= 0 V, -di
= 0 V
GE
GE
GE
CES
CES
CE
G
= 15 V
GE
= 15 V
= 15 V, V
, R
, R
= 10 V, Note 1
G
= 0 V
G
G
CES
J
J
F
= 10 Ω
= 10 Ω
= 125° ° ° ° ° C
/dt = 100 A/µs
4,835,592
4,850,072
4,881,106
= 25° ° ° ° ° C
, higher T
CES
CE
R
, higher T
= 0.5 V
= 30 V
4,931,844
5,017,508
5,034,796
J
(T
(T
or
J
J
CES
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
J
CE
5,049,961
5,063,307
5,187,117
T
T
T
J
J
J
= 100°C 110
= 100°C
=150°C
min.
min.
3.5
Characteristic Values
Characteristic Values
5,237,481
5,381,025
5,486,715
0.52
0.25
typ.
typ.
800
110
116
126
380
180
210
970
4.5
30
7.0
28
33
12
12
30
30
30
30
6,162,665
6,259,123 B1
6,306,728 B1
max.
1.35
2.10
0.66 K/W
600
1.6 K/W
max.
K/W
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
µJ
ns
ns
ns
ns
µJ
ns
ns
6,404,065 B1
6,534,343
6,583,505
S
V
V
A
TO-247 Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
IXSH 20N60B2D1
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
1
Millimeter
.4
3 - Source
2
6,727,585
6,759,692
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216