IXSQ20N60B2D1 IXYS, IXSQ20N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXSQ20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO-3P
• Manufacturer: IXYS

Specifications of IXSQ20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1. Forward current I
Fig. 4. Dynamic parameters Q
Fig. 7
I
0.001
Z
F
K
0.01
K/W
thJC
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
40
30
20
10
10
A
0
1
0
0
versus T
Transient thermal resistance junction-to-case
40
T
T
T
VJ
VJ
VJ
I
RM
=150°C
=100°C
= 25°C
VJ
1
0.0001
Q
80
r
T
F
VJ
versus V
V
120
F
2
r
°C
, I
0.001
RM
V
160
F
Q
t
r
rr
2000
1500
1000
120
110
100
500
nC
ns
Fig. 2. Reverse recovery charge Q
Fig. 5. Recovery time t
90
80
70
0
100
0.01
0
T
V
versus -di
VJ
R
I
I
I
200
F
F
F
= 30A
= 15A
= 7.5A
= 100°C
= 300V
400
F
/dt
0.1
-di
600
I
I
I
F
F
F
F
-di
= 30A
= 15A
= 7.5A
/dt
T
V
rr
t
F
VJ
R
/dt
versus -di
= 100°C
A/µs
= 300V
s
800
A/µs
DSEP 15-06A
1000
1000
1
F
/dt
r
Constants for Z
I
V
RM
1
2
3
FR
i
40
30
20
10
20
15
10
A
V
0
5
0
Fig. 3. Peak reverse current I
Fig. 6. Peak forward voltage V
0
0
T
I
F
I
I
I
VJ
T
V
F
F
F
200
200
= 30A
= 15A
= 7.5A
VJ
= 100°C
R
= 15A
versus -di
R
0.908
0.35
0.342
and t
= 100°C
= 300V
thi
IXSH 20N60B2D1
thJC
(K/W)
400
400
fr
versus di
calculation:
F
600
600
/dt
di
-di
V
F
t
F
/dt
fr
FR
t
0.0052
0.0003
0.017
/dt
F
i
A/µs
A/µs
800
800 1000
/dt
(s)
1000
RM
FR
1.6
1.2
0.8
0.4
0.0
µs
t
fr