IXGR24N120C3D1 IXYS, IXGR24N120C3D1 Datasheet - Page 2

• Manufacturer Part Number: IXGR24N120C3D1
• Description: IGBT PT 1200V 48A DIO ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR24N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 20A
• Current - Collector (ic) (max): 48A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 110
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (°c/w): 1
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS 247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
on
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
1.
2.
I
V
I
Inductive load, T
I
V
Note 1
Inductive load, T
I
V
Note 1
I
I
I
V
Test Conditions
Test Conditions
Switching times may increase for V
higher T
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
C
C
C
C
F
F
F
CE
CE
CE
GE
= 30A, V
= 30A, V
= 50A, -di
= 24A, V
= 20A, V
= 20A, V
= 24A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 600V, R
= 600V, R
= 0V, T
J
or increased R
GE
GE
GE
GE
GE
CE
F
J
/dt = 100A/μs, V
GE
= 0V
= 0V
= 100°C
= 15V, V
= 15V
= 15V
= 10V, Note 2
G
G
= 0V, f = 1MHz
= 5Ω
= 5Ω
4,835,592
4,881,106
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
G
= 0.5 • V
4,931,844
5,017,508
5,034,796
.
R
= 600V
CES
5,049,961
5,063,307
5,187,117
CE
T
J
(Clamp) > 0.8 • V
= 125°C
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
10
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1620
CES
1.37
0.47
2.90
1.18
0.15
Typ.
Typ.
179
110
125
305
220
5.5
17
52
79
12
36
16
26
93
17
37
,
2.00
1.00 °C/W
2.75
1.80
0.85
1.5 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
11
Max.
°C/W
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
S
V
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247 (IXGR) Outline
6,727,585
6,771,478 B2 7,071,537
IXGR24N120C3D1
7,005,734 B2
7,063,975 B2
7,157,338B2