IXGH40N120C3D1 IXYS, IXGH40N120C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH40N120C3D1
• Description: IGBT PT 1200V 40A W/DIODE TO247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH40N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.4V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 57
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.60
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
45
40
35
30
25
20
15
10
10
0.00001
5
0
0
0
10
f
= 1 MHz
5
20
Fig. 7. Transconductance
10
30
Fig. 9. Capacitance
0.0001
T
15
J
40
= - 40ºC
I
C
V
CE
- Amperes
50
- Volts
20
25ºC
125ºC
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
0.001
C ies
C oes
30
C res
80
35
90
Pulse Width - Seconds
100
40
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
J
G
20
= 40A
= 10mA
= 125ºC
= 3Ω
= 600V
400
0.1
40
Fig. 8. Gate Charge
Q
IXGH40N120C3D1
600
60
G
- NanoCoulombs
V
CE
80
- Volts
800
100
1
1000
120
IXYS REF: G_40N120C3(6N)2-18-09-A
140
1200
160
10