IXGH40N120C3D1 IXYS, IXGH40N120C3D1 Datasheet - Page 7

• Manufacturer Part Number: IXGH40N120C3D1
• Description: IGBT PT 1200V 40A W/DIODE TO247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH40N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.4V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 57
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.60
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 27. Transient Thermal Resistance Junction to Case
Fig. 21. Forward Current I
Fig. 24. Dynamic Parameters Q
Note: Fig. 21to Fig. 22 show typical values
Z
I
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0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
Versus T
VJ
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
F
VJ
T
V
Versus V
120
VJ
F
=25°C
r
, I
°C
3
RM
0.001
V
160
F
t
rr
Q
1000
Fig. 22. Reverse Recovery Charge Q
Fig. 25. Recovery Time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
Versus -di
200
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
F
I
I
I
0.1
/dt
F
F
F
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
rr
VJ
F
R
t
/dt
Versus -di
= 100°C
= 300V
A/μs
s
800
A/μs
DSEP 29-06
1000
1000
1
F
r
/dt
I
V
RM
FR
Fig. 23. Peak Reverse Current I
30
25
20
15
10
20
15
10
Fig. 26. Peak Forward Voltage V
A
5
0
V
5
0
IXGH40N120C3D1
0
0
T
V
T
I
t
F
VJ
fr
R
VJ
= 100°C
= 300V
= 100°C
= 30A
200
200
Versus -di
t
fr
Versus di
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
400
V
FR
F
/dt
F
600
600
/dt
di
-di
F
/dt
F
/dt
A/μs
A/μs
800
800
RM
1000
1000
FR
1.00
0.75
0.50
0.25
0.00
and
μs
t
fr