HGT1S10N120BNST Fairchild Semiconductor, HGT1S10N120BNST Datasheet
HGT1S10N120BNST
Specifications of HGT1S10N120BNST
HGT1S10N120BNSTTR
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HGT1S10N120BNST Summary of contents
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... HGTG10N120BN TO-247 HGTP10N120BN TO-220AB HGT1S10N120BNS TO-263AB NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNST. Symbol FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 ...
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... Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge ©2002 Fairchild Semiconductor Corporation Unless Otherwise Specified o C (Figure SSOA = 15V 12V ...
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... T Figure 18. Typical Performance Curves CASE TEMPERATURE ( C FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2002 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS t IGBT and Diode at T d(ON 10A 960V 15V GE ...
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... COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2mH 960V 150 12V COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2002 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) = 960V 15V 12V o 15V 110 C o 110 C 12V 150 FIGURE 6 ...
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... EMITTER CURRENT 100 DUTY CYCLE <0.5 20V CE PULSE DURATION = 250 150 - GATE TO EMITTER VOLTAGE (V) GE FIGURE 13. TRANSFER CHARACTERISTIC ©2002 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued 150 15V FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO = 960V 15V 150 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER 2mH, V ...
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... SINGLE PULSE - FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms L = 2mH FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGTG10N120BND V ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2002 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application ...
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