HGT1S10N120BNST Fairchild Semiconductor, HGT1S10N120BNST Datasheet - Page 8

• Manufacturer Part Number: HGT1S10N120BNST
• Description: IGBT NPT N-CHAN 1200V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S10N120BNST

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 35A
• Gate To Emitter Voltage (max): ±20V
• Package Type: D2PAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HGT1S10N120BNST; HGT1S10N120BNSTTR

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