HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet
HGTG12N60C3D
Specifications of HGTG12N60C3D
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HGTG12N60C3D Summary of contents
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... Data Sheet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... 150 150 3.0 5 480V 80 - CE(PK 600V 24 - CE(PK) - 7.6 CES V = 15V - 20V - 270 - 210 - 380 - 900 - 1.7 UNITS µ s µ s MAX UNITS - µ A 250 2.0 mA 2.0 V 2.2 V 2.2 V 2.4 V 6.0 V ± 100 400 ns 275 ns µ µ 2.0 V HGTG12N60C3D Rev. B ...
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... Fairchild Semiconductor Corporation o C, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS 12A, dI /dt = 100A/µ 1.0A, dI /dt = 100A/µ IGBT θJC Diode = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for 150 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE MIN TYP ...
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... FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 400 150 25Ω 100mH CE(PK) 300 V = 10V GE 200 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 300 150 25Ω 100µ CE(PK) 200 V = 10V or 15V GE 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 140 120 100 480V V = 15V 480V 25 30 HGTG12N60C3D Rev. B ...
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... L = 100µ LIMITED BY CIRCUIT 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE(PK) FIGURE 14. SWITCHING SAFE OPERATING AREA I = 1.276mA 50Ω, T G(REF) L 600 480 V = 600V CE 360 240 V = 400V 200V CE 120 GATE CHARGE (nC) G FIGURE 16. GATE CHARGE WAVEFORMS = 480V 25 30 500 600 HGTG12N60C3D Rev. B ...
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... FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation (Continued RECTANGULAR PULSE DURATION ( 2.0 2.5 3.0 FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT 480V DUTY FACTOR θ θ PEAK /dt = 100A/µ FORWARD CURRENT (A) EC 90% 10 OFF ON 90% 10% t d(OFF d(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS HGTG12N60C3D Rev ...
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... MAX2 D C OFF ) is defined 50% duty factor was used (Figure 13) and the D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and OFF = 0). CE HGTG12N60C3D Rev MAX1 ). D(ON D(OFF)I ). The )/R . θ the ; i.e. the OFF ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...