HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet - Page 2

• Manufacturer Part Number: HGTG12N60C3D
• Description: IGBT UFS N-CHAN 600V 24A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Average Diode Forward Current at 110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 360V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PARAMETER
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 25 Ω.
o
= 25
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
= 25
GE
GE
o
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
V
d(ON)I
E
GE(TH)
I
I
E
G(ON)
V
CES
GES
GEP
OFF
t
t
ON
EC
CES
ECS
rI
fI
I
I
V
V
I
V
I
V
I
V
V
T
V
R
L = 100 µ H
I
I
V
T
I
V
V
R
L = 100 µ H
I
C
C
C
C
C
C
C
CE
EC
J
J
GE
CE
CE
GE
GE
CE
GE
GE
CE
CE(PK)
G
G
= 250 µ A, V
= 10mA, V
= I
= 15A,
= 250 µ A,
= I
= I
= 150
= 150
= 25 Ω,
= 25 Ω,
= I
= 12A
= BV
= BV
= V
= 15V,
= 0.5 BV
= 15V,
= 15V
= 15V
= ± 20V
C110
C110
C110
C110,
GE
o
o
= 0.8 BV
TEST CONDITIONS
CES
CES
C,
C,
,
, V
,
CE
GE
CES
GE
= 0.5 BV
= 0V
= 0V
CES,
J
T
T
T
T
T
T
T
V
V
V
V
, T
C
C
C
C
C
C
C
CE(PK)
CE(PK)
GE
GE
(AVG)
C110
GEM
GES
CES
STG
= 25
= 150
= 25
= 150
= 25
= 150
= 25
C25
CES
CM
SC
SC
= 15V
= 20V
D
L
o
o
o
o
= 480V
= 600V
C
C
C
C
o
o
o
C
C
C
HGTG12N60C3D
24A at 600V
-40 to 150
MIN
600
3.0
15
80
24
0.83
600
± 20
± 30
104
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
12
15
96
13
4
TYP
1.65
1.85
1.80
270
210
380
900
2.0
5.0
7.6
1.7
25
48
62
14
16
-
-
-
-
-
-
HGTG12N60C3D Rev. B
MAX
± 100
250
400
275
2.0
2.0
2.2
2.2
2.4
6.0
2.0
55
71
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
W
µ s
µ s
V
A
A
A
A
V
V
C
C
o
UNITS
C
mA
nC
nC
µ A
nA
ns
ns
ns
ns
µ J
µ J
V
V
V
V
V
V
V
A
A
V
V