HGTG11N120CN Fairchild Semiconductor, HGTG11N120CN Datasheet - Page 3

• Manufacturer Part Number: HGTG11N120CN
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
NOTES:
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
5. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
45
40
35
30
25
20
15
10
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 18.
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
t
t
d(OFF)I
d(OFF)I
E
E
E
E
d(ON)I
E
d(ON)I
E
R
ON1
ON2
OFF
ON1
ON2
OFF
t
t
t
t
125
rI
fI
rI
fI
JC
V
CE
GE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
= 15V
IGBT and Diode at T
I
V
V
R
L = 2mH
Test Circuit (Figure 18)
IGBT and Diode at T
I
V
V
R
L = 2mH
Test Circuit (Figure 18)
CE
CE
CE
GE
CE
GE
G
G
150
= 10
= 10
= 11A
= 11A
= 960V
= 15V
= 960V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
60
50
40
30
20
10
0
J
J
0
= 25
= 150
T
o
J
C
o
= 150
C
200
V
CE
o
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B
, COLLECTOR TO EMITTER VOLTAGE (V)
C, R
ON1
400
J
G
as the IGBT. The diode type is specified in
= 10 , V
is the turn-on loss of the IGBT only. E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
600
GE
= 15V, L = 400 H
TYP
0.95
0.45
180
190
210
340
800
0.4
1.3
1.9
2.1
23
12
21
12
-
1000
MAX
0.42
240
230
280
400
0.5
1.3
1.6
0.6
2.5
2.5
26
16
24
16
1200
UNITS
o
C/W
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ON2
1400