HGTG11N120CN Fairchild Semiconductor, HGTG11N120CN Datasheet - Page 6

• Manufacturer Part Number: HGTG11N120CN
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuit and Waveforms
©2001 Fairchild Semiconductor Corporation
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
4
3
2
1
0
0
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
C
RES
FREQUENCY = 1MHz
10
10
10
-1
-2
0
10
R
G
-5
V
VOLTAGE
0.05
0.02
0.5
0.2
0.1
0.01
= 10
CE
5
, COLLECTOR TO EMITTER VOLTAGE (V)
C
IES
SINGLE PULSE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
C
OES
10
L = 2mH
-4
15
HGTG11N120CND
+
-
Unless Otherwise Specified (Continued)
V
DD
20
= 960V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
25
V
V
I
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
CE
GE
CE
15
12
9
6
3
0
0
DUTY CYCLE < 0.5%, T
250 s PULSE TEST
10
FIGURE 19. SWITCHING TEST WAVEFORMS
-2
DUTY FACTOR, D = t
PEAK T
V
t
P
d(OFF)I
CE
D
90%
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B
, COLLECTOR TO EMITTER VOLTAGE (V)
J
= (P
1
10%
D
t
fI
X Z
C
JC
t
1
= 110
1
E
V
/ t
OFF
X R
10
GE
90%
t
2
2
-1
2
o
= 15V
JC
C
) + T
E
ON2
C
10%
V
GE
t
d(ON)I
= 10V
t
3
rI
10
0
4