HGTG20N60B3 Fairchild Semiconductor, HGTG20N60B3 Datasheet

IGBT UFS N-CHAN 600V 40A TO-247

HGTG20N60B3

Manufacturer Part Number
HGTG20N60B3
Description
IGBT UFS N-CHAN 600V 40A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60B3

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
165W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
40 A
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
165 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
165W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60B3
Manufacturer:
HARRIS
Quantity:
17
Part Number:
HGTG20N60B3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
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Manufacturer:
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Quantity:
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40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25
150
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
o
PART NUMBER
C.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
HG20N60B3
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
o
C and
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 40A, 600V at T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
Packaging
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
October 2004
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
C
= 25
JEDEC STYLE TO-247
o
C
HGTG20N60B3
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
E
(FLANGE)
C
HGTG20N60B3 Rev.B3
G
4,587,713
4,644,637
4,801,986
4,883,767
o
C

Related parts for HGTG20N60B3

HGTG20N60B3 Summary of contents

Page 1

... Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- ...

Page 2

... T = 150 C d(ON C110 0 CES t d(OFF 15V 100 OFF 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for CE HGTG20N60B3 600 CES 600 CGR 40 C25 20 C110 160 CM 20 GES 30 GEM 30A at 600V 165 D 1. -40 to 150 J STG 300 L 260 pkg MIN TYP ...

Page 3

... DUTY CYCLE <0. COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. SATURATION CHARACTERISTICS 100 PULSE DURATION = 250 s DUTY CYCLE <0.5 15V - 150 COLLECTOR TO EMITTER VOLTAGE ( 600V g(REF 400V 200V GATE CHARGE (nC) G FIGURE 6. GATE CHARGE WAVEFORMS = 10V = 8.5V = 8.0V = 7. 1.685mA = 100 80 HGTG20N60B3 Rev.B3 ...

Page 4

... FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT o = 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG20N60B3 Rev. ...

Page 5

... DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( 480V 120 150 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 14. SWITCHING SAFE OPERATING AREA 90% 10 OFF ON 90% 10% t d(OFF FIGURE 17. SWITCHING TEST WAVEFORMS = 15V 500 600 700 d(ON)I HGTG20N60B3 Rev.B3 ...

Page 6

... Figure 17. d(OFF)I d(ON )/( MAX2 D C OFF defined 50% duty factor was used (Figure 13 are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and OFF HGTG20N60B3 Rev. d(OFF)I ). The - T )/ the ) during CE = 0). ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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