HGTG20N60B3 Fairchild Semiconductor, HGTG20N60B3 Datasheet - Page 2

• Manufacturer Part Number: HGTG20N60B3
• Description: IGBT UFS N-CHAN 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG20N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 165 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 165W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
NOTE:
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector to Gate Voltage, R
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
©2004 Fairchild Semiconductor Corporation
3. Turn-Off Energy Loss (E
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
CE
C
C
= 25
= 110
= 360V, T
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
= 125
o
C
OFF
GE
C, R
C
= 25
> 25
= 1M
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
G
o
= 25
T
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
= 25
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
C
= 25
GE
GE
o
o
C, Unless Otherwise Specified
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
SYMBOL
V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
V
Q
t
o
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
d(ON)I
E
C, Unless Otherwise Specified
R
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
ECS
rI
fI
JC
CE
I
I
V
I
I
V
T
R
I
I
V
T
I
V
V
R
L = 100 H
= 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for
C
C
C
C
C
C
CE
CE
GE
C
CE
C
CE
GE
G
G
= 250 A, V
= -10mA, V
= I
= 250 A, V
= I
= I
= 150
= 150
= 10
= 10
= I
= BV
= 20V
= 0.5 BV
= 0.8 BV
= 15V
C110
C110
C110
C110
o
o
CES
, V
, V
C, V
,
C
L = 45 H
TEST CONDITIONS
GE
CE
CES
CES
GE
CE
GE
GE
= 15V
= 0.5 BV
= 0V
= V
= 0V
= 15V,
GE
J
CES
, T
T
T
T
T
V
V
V
V
C110
GEM
CGR
C
C
C
C
CE
CE
GE
GE
GES
CES
STG
C25
pkg
CM
SC
SC
= 25
= 150
= 25
= 150
D
L
= 480V
= 600V
= 15V
= 20V
o
o
C
C
o
o
C
C
HGTG20N60B3
30A at 600V
-40 to 150
MIN
600
100
3.0
1.32
20
30
600
600
160
165
300
260
40
20
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
30
4
1050
TYP
105
220
140
475
1.8
2.1
5.0
8.0
80
25
20
-
-
-
-
-
-
-
-
HGTG20N60B3 Rev.B3
MAX
0.76
250
105
135
275
175
1.0
2.0
2.5
6.0
100
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
V
A
A
A
V
V
C
C
C
o
s
s
UNITS
C
o
mA
C/W
nA
nC
nC
ns
ns
ns
ns
V
V
V
V
V
A
A
V
A
J
J