HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet - Page 3

• Manufacturer Part Number: HGTG11N120CND
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 43 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 43 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 43A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
NOTE:
Typical Performance Curves
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
45
40
35
30
25
20
15
10
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
0
5
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
d(OFF)I
d(ON)I
E
R
E
V
OFF
t
t
t
θJC
ON
EC
125
rr
rI
fI
V
CE
GE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
= 15V
IGBT and Diode at T
I
V
V
R
L = 2mH,
Test Circuit (Figure 20)
I
I
I
IGBT
Diode
CE
EC
EC
EC
GE
CE
G
150
= 10 Ω ,
= 11A,
= 11A
= 11A, dl
= 1A, dl
= 960V,
= 15V,
TEST CONDITIONS
EC
EC
/dt = 200A/ µ s
/dt = 200A/ µ s
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
60
50
40
30
20
10
0
J
0
= 150
T
J
o
= 150
C,
200
V
CE
o
, COLLECTOR TO EMITTER VOLTAGE (V)
C, R
400
G
= 10Ω, V
MIN
-
-
-
-
-
-
-
-
-
-
-
600
GE
= 15V, L = 400µH
TYP
210
360
800
1.9
2.1
2.6
21
12
60
32
-
-
1000
HGTG11N120CND Rev. B
MAX
0.42
1.25
280
400
2.5
2.5
3.2
24
16
70
40
1200
UNITS
o
o
C/W
C/W
mJ
mJ
ns
ns
ns
ns
ns
ns
V
1400