HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet - Page 4

• Manufacturer Part Number: HGTG11N120CND
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 43 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 43 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 43A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
200
100
50
10
40
50
30
20
10
5
4
3
2
1
0
5
0
0
2
0
P
f
f
R
MAX1
MAX2
R
C
ØJC
G
= CONDUCTION DISSIPATION
= 10Ω, L = 2mH, V
(DUTY FACTOR = 50%)
= 0.42
= 0.05 / (t
= (P
T
EMITTER CURRENT
EMITTER CURRENT
I
I
C
CE
CE
V
CE
= -55
D
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
o
- P
, COLLECTOR TO EMITTER VOLTAGE (V)
C/W, SEE NOTES
= 150
5
2
o
C
d(OFF)I
C
)/(E
T
J
o
= 150
C, V
ON
CE
+ t
5
GE
+ E
T
o
= 960V
T
d(ON)I
J
C, R
C
OFF
= 12V, V
= 25
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 75
10
G
4
)
)
o
= 10Ω, L = 2mH, V
C, V
o
C, V
110
110
GE
T
T
75
75
T
GE
C
C
C
GE
o
o
o
o
= 15V
= 150
C
C
C
C
= 25
= 12V, V
Unless Otherwise Specified (Continued)
= 15V, IDEAL DIODE
10
V
15V
12V
15V
12V
o
GE
o
C
15
C
6
GE
CE
= 15V
GE
= 960V
= 12V
20
20
8
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
25
20
15
10
50
40
30
20
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
0
0
12
0
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
R
T
G
J
= 10Ω, L = 2mH, V
= 150
V
EMITTER CURRENT
CE
I
T
V
CE
V
C
CE
GE
= 840V, R
o
13
= -55
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
, GATE TO EMITTER VOLTAGE (V)
2
5
GE
o
C
= 12V OR 15V
G
t
SC
= 10Ω, T
T
CE
J
14
= 25
= 960V
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
o
10
J
4
C, V
= 125
T
C
GE
T
= 25
o
C
C
= 12V OR 15V
= 150
15
o
C
HGTG11N120CND Rev. B
o
I
C
15
SC
6
GE
16
= 15V
250
200
150
100
50
20
8