FGA25N120ANTDTU_F109 Fairchild Semiconductor, FGA25N120ANTDTU_F109 Datasheet - Page 3

• Manufacturer Part Number: FGA25N120ANTDTU_F109
• Description: IGBT NPT 25A 1200V TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU_F109

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Electrical Characteristics of DIODE
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
Parameter
I
dI/dt = 200 A/µs
I
F
F
= 25A
= 25A
T
C
= 25°C unless otherwise noted
Test Conditions
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
3130
4650
235
300
2.0
2.1
27
31
Max.
4700
350
3.0
40
--
--
--
--
www.fairchildsemi.com
Units
nC
ns
V
A