FGA25N120ANTDTU_F109 Fairchild Semiconductor, FGA25N120ANTDTU_F109 Datasheet - Page 6

• Manufacturer Part Number: FGA25N120ANTDTU_F109
• Description: IGBT NPT 25A 1200V TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU_F109

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
0.01
100
0.1
0.1
10
10
1
1
0.1
10
Common Emitter
V
T
T
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
GE
C
C
= 25
= 125
=
±
1 1 0
1
15V, R
°
C
C
°
C
= 25
Collector - Emitter Voltage, V
1
20
°
G
C
= 10
Collector Current, I
1 E - 3
0 . 0 1
0 .
Ω
1 E - 5
10
DC Operation
30
0.2
0.1
0.05
0.02
0.01
0.5
Figure 17. Transient Thermal Impedance of IGBT
single pulse
C
100
[A]
1 E - 4
1ms
CE
40
[V]
100
µ
s
Eoff
1000
Eon
50
µ
s
R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
50
1 E - 3
(Continued)
6
0 . 0 1
Figure 14. Gate Charge Characteristics
Figure 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0 . 1
0
1
Common Emitter
R
T
C
L
= 24
= 25
20
Ω
°
Pdm
C
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
40
Collector-Emitter Voltage, V
60
t1
1
10
Gate Charge, Q
t2
Safe Operating Area
V
GE
80
= 15V, T
Vcc = 200V
100
C
C
120
= 125
1 0
100
g
[nC]
°
140
C
CE
[V]
160
400V
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600V
180
1000
200