HGTG30N60B3 Fairchild Semiconductor, HGTG30N60B3 Datasheet

IGBT UFS N-CHAN 600V 60A TO-247

HGTG30N60B3

Manufacturer Part Number
HGTG30N60B3
Description
IGBT UFS N-CHAN 600V 60A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG30N60B3

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
208W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
o
C and 150
PACKAGE
E
C
o
C.
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G30N60B3
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 60A, 600V, T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T
• Short Circuit Rating
• Low Conduction Loss
Packaging
November 2004
C
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
= 25
JEDEC STYLE TO-247
o
C
HGTG30N60B3
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
E
(FLANGE)
C
HGTG30N60B3 Rev. B3
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 150
o
C

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HGTG30N60B3 Summary of contents

Page 1

... Data Sheet 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... T -55 to 150 J STG 260 MIN TYP 600 - 150 1. 150 C - 1.7 C 4.2 5 480V 200 - CE (PK 600V (PK) - 7.2 CES V = 15V - 170 20V - 230 137 - 58 - 500 - 550 - 680 UNITS MAX UNITS - 250 A 3.0 mA 1.9 V 2.1 V 6.0 V 250 190 nC 250 800 J 900 J HGTG30N60B3 Rev. B3 ...

Page 3

... V , COLLECTOR TO EMITTER VOLTAGE ( 360V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS - 320 ns 150 1550 J 1900 J o 0.6 C/W ON2 500 600 700 500 450 400 350 300 250 200 150 14 15 HGTG30N60B3 Rev. B3 ...

Page 4

... L = 1mH 480V G CE 4.0 3.5 3.0 2 150 10V OR 15V J GE 2.0 1 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 250 1mH 480V 150 J J 200 150 15V 150 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 10V OR 15V 10V HGTG30N60B3 Rev. B3 ...

Page 5

... RES COLLECTOR TO EMITTER VOLTAGE (V) CE 120 1mH 480V 150 10V AND 15V 100 COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA (REF 600V 200V 400V 100 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS FREQUENCY = 1MHz 10V AND 15V 50 60 150 200 HGTG30N60B3 Rev. B3 ...

Page 6

... FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms L = 1mH FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGTG30N60B3D 480V 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 18. SWITCHING TEST WAVEFORMS HGTG30N60B3 Rev ...

Page 7

... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG30N60B3 Rev d(OFF)I ). The ON2 - T )/ ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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