HGTG30N60B3 Fairchild Semiconductor, HGTG30N60B3 Datasheet - Page 3

• Manufacturer Part Number: HGTG30N60B3
• Description: IGBT UFS N-CHAN 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
NOTES:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 17.
60
50
40
30
20
10
0.1
10
0
1
25
5
P
f
f
R
MAX1
MAX2
C
ØJC
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
PARAMETER
= 0.6
TEMPERATURE
I
EMITTER CURRENT
= 0.05 / (t
= (P
CE
50
, COLLECTOR TO EMITTER CURRENT (A)
D
o
C/W, SEE NOTES
- P
T
C
10
C
d(OFF)I
, CASE TEMPERATURE (
) / (E
OFF
ON2
75
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
T
T
OFF
C
J
)
20
= 150
= 25
)
100
110
110
75
75
T
o
o
C
C, Unless Otherwise Specified (Continued)
C, R
o
o
o
o
C
C
C
C
Unless Otherwise Specified
o
SYMBOL
C)
G
t
V
15V
10V
15V
10V
t
d(OFF)I
E
E
E
d(ON)I
R
= 3 , L = 1mH,
GE
125
ON1
ON2
OFF
t
t
rI
V
fI
JC
V
CE
40
GE
CE
= 480V
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
150
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 17)
CE
60
GE
CE
G
= 3
= I
= 0.8 BV
= 15V
C110
TEST CONDITIONS
CES
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
18
16
14
12
10
225
200
175
150
125
100
J
8
6
75
50
25
0
= 150
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
V
T
CE
J
o
= 150
= 360V, R
C
100
V
CE
11
V
o
GE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
ON1
J
, GATE TO EMITTER VOLTAGE (V)
G
as the IGBT. The diode type is specified in
G
200
= 3 , T
= 3 , V
is the turn-on loss of the IGBT only. E
12
MIN
-
-
-
-
-
-
-
-
J
GE
300
= 125
= 15V, L =100 H
o
13
C
1300
1600
TYP
275
500
400
32
24
90
-
I
t
SC
SC
500
14
MAX
1550
1900
HGTG30N60B3 Rev. B3
320
150
0.6
-
-
-
600
15
UNITS
o
500
450
400
350
300
250
200
150
C/W
ns
ns
ns
ns
J
J
J
700
ON2