FGA30N120FTDTU Fairchild Semiconductor, FGA30N120FTDTU Datasheet - Page 7

• Manufacturer Part Number: FGA30N120FTDTU
• Description: IGBT 30A 1200V TRENCH TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA30N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 339W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 30 A
• Power Dissipation: 339 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA30N120FTD Rev. A
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 21. Reverse Recovery Time
50
40
30
20
1000
800
600
400
10
10
Forward Current, I
Forward Current, I
20
20
di/dt = 100A/
di/dt = 100A/
200A/
Figure 22. Transient Thermal Impedance of IGBT
200A/
µ
s
µ
F
s
30
[A]
F
µ
µ
30
s
[A]
s
40
40
7
Figure 20. Stored Charge
20
18
16
14
12
10
8
6
10
P
DM
t
Forward Current, I
1
t
2
20
200A/
di/dt = 100A/
µ
s
F
µ
30
[A]
s
www.fairchildsemi.com
40