HGTG40N60B3 Fairchild Semiconductor, HGTG40N60B3 Datasheet

IGBT N-CH UFS 600V 70A TO-247

HGTG40N60B3

Manufacturer Part Number
HGTG40N60B3
Description
IGBT N-CH UFS 600V 70A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG40N60B3

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
70A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
290W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG40N60B3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG40N60B3
Manufacturer:
HARRIS
Quantity:
20 000
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
o
C and 150
PACKAGE
C
E
o
C.
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G40N60B3
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 70A, 600V, T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T
• Short Circuit Rating
• Low Conduction Loss
Packaging
November 2004
C
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
= 25
JEDEC STYLE TO-247
o
C
HGTG40N60B3
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
E
(FLANGE)
C
File Number
HGTG40N60B3 Rev. B3
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 150
o
C

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HGTG40N60B3 Summary of contents

Page 1

... Data Sheet 70A, 600V, UFS Series N-Channel IGBT The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... J STG 260 MIN TYP 600 - 150 1 150 C - 1.5 C 3.0 4 480V 200 - 600V 100 - CE - 7.5 CES V = 15V - 250 20V - 335 170 - 50 - 1050 - 800 UNITS MAX UNITS - 100 A 6.0 mA 2.0 V 2.3 V 6.0 V 100 330 nC 435 200 ns 100 ns 1200 J 1400 J HGTG40N60B3 Rev. B3 ...

Page 3

... V , COLLECTOR TO EMITTER VOLTAGE ( 360V GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS - 375 ns 175 0.43 C/W 500 600 700 900 o = 125 C J 800 700 600 500 400 300 200 14 15 HGTG40N60B3 Rev. B3 ...

Page 4

... AND 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 600 100 480V G CE 500 400 150 10V J GE 300 200 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 10V AND 15V 80 100 = 10V AND 150 C, = 10V AND 15V 80 100 HGTG40N60B3 Rev. B3 ...

Page 5

... OES 2 C RES COLLECTOR TO EMITTER VOLTAGE ( 100 480V 150 10V AND 15V 10V AND 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 3.255mA 7 g(REF 400V 600V 200V 100 150 200 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORM 20 25 HGTG40N60B3 Rev 100 250 300 ...

Page 6

... FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveform L = 100µ H RHRP3060 FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation (Unless Otherwise Specified) (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( 480V 90% 10 OFF 90% 10 d(OFF d(ON)I FIGURE 18. SWITCHING TEST WAVEFORM HGTG40N60B3 Rev ...

Page 7

... MAX1 d(OFF)I d(ON)I and t are defined in Figure 18. d(OFF)I d(ON )/( MAX2 D C OFF defined 50% duty factor was used (Figure 3) and )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and OFF HGTG40N60B3 Rev d(OFF)I ). The - T )/ the ) during CE = 0). ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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