HGTG40N60B3 Fairchild Semiconductor, HGTG40N60B3 Datasheet - Page 5

• Manufacturer Part Number: HGTG40N60B3
• Description: IGBT N-CH UFS 600V 70A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG40N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
300
250
200
150
100
200
160
120
80
40
0
4
T
T
FIGURE 13. TRANSFER CHARACTERISTIC
J
DUTY CYCLE = <0.5%, V
PULSE DURATION = 25 s
J
= 25
= 25
T
20
J
T
EMITTER CURRENT
T
I
= 150
CE
C
C
T
o
o
J
C, V
= 150
5
C, V
= 25
, COLLECTOR TO EMITTER CURRENT (A)
V
= 150
GE
o
GE
GE
C, V
o
o
, GATE TO EMITTER VOLTAGE (V)
C
C
o
= 15V
= 15V
C, V
GE
40
6
= 15V
GE
= 10V
R
CE
G
7
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
= 10V
= 3 , L = 100 H, V
60
14
12
10
8
8
6
4
2
0
(Unless Otherwise Specified) (Continued)
0
T
C
80
= -55
CE
V
9
CE
= 480V
o
C
, COLLECTOR TO EMITTER VOLTAGE (V)
5
C
C
C
100
IES
RES
10
OES
10
FREQUENCY = 400kHz
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
15
180
140
100
60
20
15
12
9
6
3
0
0
I
R
g(REF)
T
G
FIGURE 14. GATE CHARGE WAVEFORM
J
= 150
20
= 3 , L = 100 H, V
20
V
CURRENT
I
CE
CE
= 3.255mA, R
50
= 600V
o
, COLLECTOR TO EMITTER CURRENT (A)
C, V
V
CE
GE
25
Q
= 200V
100
40
= 10V AND 15V
G
, GATE CHARGE (nC)
L
V
CE
= 7.5 , T
CE
T
= 480V
J
= 400V
= 25
150
60
o
C
C, V
= 25
GE
200
o
C
= 10V AND 15V
HGTG40N60B3 Rev. B3
80
250
100
300