APT20GN60BDQ1G Microsemi Power Products Group, APT20GN60BDQ1G Datasheet

IGBT 600V 40A 136W TO247

APT20GN60BDQ1G

Manufacturer Part Number
APT20GN60BDQ1G
Description
IGBT 600V 40A 136W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT20GN60BDQ1G.pdf (9 pages)

Specifications of APT20GN60BDQ1G

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
136W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
600V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. Low gate charge simplifies gate drive
1
(V
CE
CE
CE
@ T
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
C
GE
GE
= 175°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 175°C
= ±20V)
, I
C
GE
= 290µA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 20A, T
= 20A, T
C
j
j
j
= 2mA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
MIN
600
5.0
1.1
APT20GN60BDQ1(G)
APT20GN60BDQ1
APT20GN60BDQ1G*
60A @ 600V
-55 to 175
TYP
600
±30
136
300
N/A
5.8
1.5
1.7
40
24
60
APT20GN60BDQ1(G)
G
G
600V
C
E
MAX
TBD
300
6.5
1.9
50
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT20GN60BDQ1G Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT20GN60BDQ1(G) APT20GN60BDQ1 APT20GN60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish 25°C unless otherwise specified. C APT20GN60BDQ1(G) 600 ± 60A @ 600V 136 -55 to 175 300 MIN TYP MAX 600 5.0 5 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V 25° 125° 175° -55° 0.5 1.0 1.5 2.0 2 COLLECTER-TO-EMITTER VOLTAGE (V) ...

Page 4

V = 15V 400V 25°C T =125° 4.3Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...

Page 5

TYPICAL PERFORMANCE CURVES 2,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 1. 0.9 1.00 0.7 0.80 0.60 0.5 0.40 0.3 0.20 0.1 0.05 0 ...

Page 6

Gate Voltage t d(off) Collector Voltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125° Gate Voltage 10 ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current (T F(AV) I RMS Forward Current (Square wave, 50% duty) F(RMS) Non-Repetitive Forward Surge Current (T I FSM STATIC ELECTRICAL ...

Page 8

T = 175° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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