APT20GN60BDQ1G Microsemi Power Products Group, APT20GN60BDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT20GN60BDQ1G
• Description: IGBT 600V 40A 136W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GN60BDQ1G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 136W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.40
1.30
1.20
1.10
1.00
0.90
0.80
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
T
GE
V
TEST<0.5 % DUTY
V
J
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
= -55°C
GE
J
250µs PULSE
T
= 15V
= 175°C
J
0.5
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
8
0
J
T
= 125°C
J
I
C
= 25°C
1.0
25
5
= 40A
T
I
C
10
T
T
J
T
J
J
= 175°C
= 20A
50
J
= -55°C
= 125°C
= 25°C
1.5
I
C
75 100 125 150 175
= 10A
12
<0.5 % DUTY CYCLE
2.0
250µs PULSE TEST
10
T
J
= 25°C.
14
2.5
J
= 25°C)
3.0
16
15
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
16
14
12
10
60
50
40
30
20
10
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50 -25
V
0
0
0
CE
15V
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
I
C
J
C
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 20A
= 40A
20
25
V
T
5
GE
T
C
J
= 15V.
V
, Junction Temperature (°C)
0
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
CE
14V
V
40
50
GATE CHARGE (nC)
CE
10
25
= 300V
13V
I
= 120V
C
60
75
= 20A
50
12V
15
100
75 100 125 150 175
80
11V
20
100
125
V
10V
CE
I
C
25
J
= 480V
120
150
= 10A
9V
= 125°C)
8V
140
175
30