APT25GN120B2DQ2G Microsemi Power Products Group, APT25GN120B2DQ2G Datasheet

IGBT 1200V 67A 272W TMAX

APT25GN120B2DQ2G

Manufacturer Part Number
APT25GN120B2DQ2G
Description
IGBT 1200V 67A 272W TMAX
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT25GN120B2DQ2G.pdf (9 pages)

Specifications of APT25GN120B2DQ2G

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 25A
Current - Collector (ic) (max)
67A
Power - Max
272W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT25GN120B2DQ2GMI
APT25GN120B2DQ2GMI
TYPICAL PERFORMANCE CURVES
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
parameter distribution and slightly positive V
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V NPT Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(on)
CE(on)
performance. Easy paralleling results from very tight
1
(V
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
CE(on)
®
GE
GE
C
C
C
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
temperature coefficient. Built-in
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 25A, T
= 25A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 150µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT25GN120B2DQ2(G)
1200
MIN
APT25GN120B2DQ2G*
APT25GN120B2DQ2
1.4
5
75A @ 1200V
-55 to 150
APT25GN120B2DQ2(G)
1200
TYP
±30
272
300
5.8
1.7
1.9
67
33
75
8
1200V
G
(B2)
MAX
TBD
200
600
6.5
2.1
T-Max
®
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT25GN120B2DQ2G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT25GN120B2DQ2(G) APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) T-Max G = 25°C unless otherwise specified. C APT25GN120B2DQ2(G) 1200 ± 75A @ 1200V 272 -55 to 150 300 MIN TYP MAX 1200 5 5 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge Q gc Switching Safe Operating Area ...

Page 3

PULSE TEST<0.5 % DUTY CYCLE 3.5 3 2.5 2 1.5 1.0 0.5 0 1.10 1.05 1.00 0.95 0. ...

Page 4

V = 15V 800V 25°C T =125° 4.3Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...

Page 6

APT40DQ120 90% CollectorVoltage t d(off) 90 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions Gate Voltage T = 125°C J 10% 0 Gate Voltage 10% t ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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