APT25GN120B2DQ2G Microsemi Power Products Group, APT25GN120B2DQ2G Datasheet - Page 4

• Manufacturer Part Number: APT25GN120B2DQ2G
• Description: IGBT 1200V 67A 272W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT25GN120B2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 67A
• Power - Max: 272W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GN120B2DQ2GMI; APT25GN120B2DQ2GMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
14000
12000
10000
7000
6000
5000
4000
3000
2000
1000
8000
6000
4000
2000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
0
0
I
I
CE
CE
I
CE
V
V
R
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 4.3Ω
= 4.3Ω
= 800V
= +15V
= 800V
=
R
4.3Ω, L
G
, GATE RESISTANCE (OHMS)
,
T
J
T
=125°C
J
=
=
100
25 or 125°C,V
µ
H, V
CE
=
V
800V
GE
GE
=
= 15V
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
=
J
4.3Ω
, JUNCTION TEMPERATURE (°C)
V
800V
GE
=15V,T
J
=25°C
T
J
=
125°C, V
V
GE
GE
=15V,T
=
15V
J
=125°C