APT50GT120B2RG Microsemi Power Products Group, APT50GT120B2RG Datasheet - Page 2

• Manufacturer Part Number: APT50GT120B2RG
• Description: IGBT 1200V 94A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120B2RG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 94A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120B2RGMI; APT50GT120B2RGMI

Dynamic Characteristics
Thermal and Mechanical Characteristics
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol
Symbol Characteristic / Test Conditions
SSOA
the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
V
t
t
t
t
E
E
E
E
C
C
C
Q
Q
R
d(on)
d(off)
E
d(on)
d(off)
E
Q
on1
on2
off
G
W
GEP
t
t
on1
on2
t
t
on1
on2
oes
res
θ
ies
ge
off
off
gc
r
f
r
f
g
is external gate resistance not including gate driver impedance.
JC
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
T
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Junction to Case
Package Weight
ces
includes both IGBT and FRED leakages
6
6
4
5
5
4
T
J
= 150°C, R
Inductive Switching (125°C)
Inductive Switching (25°C)
L = 100μH, V
V
GE
Test Conditions
Gate Charge
= 0V, V
V
T
V
T
V
V
V
R
V
R
f = 1MHz
J
J
CC
CC
I
I
I
CE
G
GE
GE
GE
C
C
G
C
G
= +25°C
= 125°C
= 1.0Ω
= 600V
= 50A
= 50A
= 4.7Ω
= 50A
= 4.7Ω
= 800V
= 800V
= 15V
= 15V
= 15V
CE
CE
= 1200V
= 25V
7
, V
GE
= 15V,
Min
150
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT50GT120B2R_LR(G)
3300
5330
2330
5670
2850
TBD
TBD
10.5
Typ
500
220
340
210
230
255
40
24
53
26
24
53
48
Typ
-
-
Max
Max
0.20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.9
Unit
°C/W
Unit
nC
pF
ns
μJ
ns
μJ
gm
V
A