APT50GT120B2RG Microsemi Power Products Group, APT50GT120B2RG Datasheet - Page 5

• Manufacturer Part Number: APT50GT120B2RG
• Description: IGBT 1200V 94A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120B2RG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 94A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120B2RGMI; APT50GT120B2RGMI

Dissipated Power
Typical Performance Curves
(Watts)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
5000
1000
0.25
0.05
0.15
0. 1
0. 2
100
V
10
0
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
T
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
J
100
(°C)
D = 0.9
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.3
0.5
0.05
0.00909
0.1
0.7
EXT
0.0487
200
are the external thermal
10
300
-4
0.389
0.151
400
T
C
RECTANGULAR PULSE DURATION (SECONDS)
(°C)
500
SINGLE PULSE
C
C
ies
C
oes
res
600
10
-3
100
120
Figure 20, Operating Frequency vs Collector Current
80
60
40
20
0
10
10
-2
20
160
140
120
100
100°C
I
FIGURE 18, Minimum Switching Safe Operating Area
C
80
60
40
20
75°C
30
, COLLECTOR CURRENT (A)
0
0
V
40
CE
200
Note:
, COLLECTOR-TO-EMITTER VOLTAGE
Peak T J = P DM x Z θJC + T C
50
Duty Factor D =
10
400
-1
60
t 1
600
70
t 2
80
T
T
D = 50 %
V
R
800 1000
t 1
J
C
CE
G
/
= 125
APT50GT120B2R_LR(G)
= 75
t 2
= 1.0Ω
= 800V
90
°
°
C
C
100
1.0
F
f
f
P
1200 1400
max1
max2
max
diss
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
, f
cond
+ t
off
max2
d(off)
)
+ t
f