STGD5NB120SZ-1 STMicroelectronics, STGD5NB120SZ-1 Datasheet - Page 3

• Manufacturer Part Number: STGD5NB120SZ-1
• Description: IGBT N-CH 1200V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGD5NB120SZ-1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 75W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

STGD5NB120SZ
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Pulse width limited by max. temperature allowed
3. V
4. V
Table 3.
Symbol
E
Symbol
R
R
I
V
I
V
P
CL
I
I
CP
V
AS
C
C
thj-case
ECR
CLAMP
CE
thj-amb
CES
TOT
T
GE
(1)
(1)
(2)
j
(3)
(4)
= 50 V , I
= 80% (V
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Emitter-collector voltage
Single pulse avalanche energy at T
Single pulse avalanche energy at T
Total dissipation at T
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case IGBT max
Thermal resistance junction-ambient max
AV
= 3.3 A
CES
), V
I
GE
C
(
T
= 15 V, R
C
)
=
C
= 25 °C
Parameter
-------------------------------------------------------------------------------------------------------
R
Parameter
G
thj c
= 10 Ω, T
–
GE
×
= 0)
V
CE sat
C
C
J
C
C
= 150 °C
(
= 25 °C
= 100 °C
T
= 25 °C
= 100 °C
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
C
)
)
– 55 to 150
Value
Value
1200
1.67
100
±20
10
10
10
20
10
75
Electrical ratings
5
7
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
W
3/15
V
A
A
A
A
V
V