STGD5NB120SZ-1 STMicroelectronics, STGD5NB120SZ-1 Datasheet - Page 4

• Manufacturer Part Number: STGD5NB120SZ-1
• Description: IGBT N-CH 1200V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGD5NB120SZ-1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 75W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
V
C
GE(th)
C
C
CES
GES
R
g
GE
oes
ies
res
fs
G
=25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Gate emitter voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Gate resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Dynamic electrical characteristics
GE
GE
Static electrical characteristics
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
T
V
V
V
V
V
C
C
GE
GE
CE
CE
CE
CE
GE
CE
GE
CE
= 10 mA
= 25
= V
= 2.5 V, I
= 15 V, I
= 15 V, I
= 900 V
= ±20 V
= 900 VT
= 15 V
= 25 V, f = 1 MHz,
= 0
GE
Test conditions
Test conditions
÷
125 °C
, I
,
C
I
C
C
C
C
= 250 µA
= 5 A,T
C
= 5 A
= 5 A
= 2 A,
= 125 °C
C
= 125 °C
1200
Min.
Min.
2
Typ. Max. Unit
STGD5NB120SZ
Typ. Max. Unit
1.3
1.2
430
40
5
4
7
±100
250
2.0
6.5
50
5
µA
µA
nA
kΩ
pF
pF
pF
V
V
V
V
V
S