STGB10NB37LZ STMicroelectronics, STGB10NB37LZ Datasheet - Page 6

• Manufacturer Part Number: STGB10NB37LZ
• Description: IGBT 10A C410V CLAMPED D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NB37LZ

• Voltage - Collector Emitter Breakdown (max): 440V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 4.5V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 125W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 375V
• Collector Current (dc) (max): 20A
• Gate To Emitter Voltage (max): 12V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Doc ID 7402 Rev 4
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGB10NB37LZ, STGP10NB37LZ