IRG4BH20K-STRLP International Rectifier, IRG4BH20K-STRLP Datasheet - Page 2

• Manufacturer Part Number: IRG4BH20K-STRLP
• Description: IGBT ULT FAST 1200V 11A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BH20K-STRLP

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.3V @ 15V, 5A
• Current - Collector (ic) (max): 11A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
IRG4BH20K-SPbF
Switching Characteristics @ T
Notes:

‚
Electrical Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
d(off)
f
sc
d(on)
d(off)
f
r
r
fe
E
(BR)CES
(BR)ECS
GE(th)
on
off
ts
CE(ON)
ts
oes
ies
res
refer to application note #AN-994.
g
ge
gc
(BR)CES
2
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
…
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
=50Ω
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.5
2.3
18
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ƒ
„
…
1.13
3.17
4.04
2.84
0.45
0.44
0.89
270
100
620
435
1.7
8.3
-10
3.5
4.4
7.5
—
—
—
—
—
—
28
12
23
26
93
23
28
44
—
—
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width 5.0µs, single shot.
1000
±100
250
140
400
4.3
6.5
2.0
6.6
1.2
—
—
—
—
—
—
—
43
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
nA
nC
mJ
nH
pF
µs
V
V
S
≤
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Between lead and center of die contact
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
C
CC
GE
GE
CC
GE
GE
GE
CC
C
C
= 5.0A
=5.0A, V
= 5.0A, V
= 25°C
= 150°C,
= 5.0A
= 11A
= 5.0A , T
= V
= V
= 100 V, I
= 0V, V
= ±20V
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 15V
= 0V
= 400V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
C
C
CE
CE
CC
= 250µA
= 1.0A
= 2.5mA
CC
J
= 250µA
= 1mA
G
G
G
C
= 1200V
= 150°C
= 10V, T
= 1200V, T
J
= 960V
= 50Ω
= 50Ω
= 960V
= 50Ω
= 5.0A
= 125°C
≤
See Fig.8
See Fig. 7
J
www.irf.com
= 25°C
V
See Fig.2, 5
J
GE
= 150°C
= 15V